bav200/bav201/bav202/bav203 document number 85544 rev. 1.7, 25-apr-08 vishay semiconductors www.vishay.com 1 9612009 for technical support, please contact: diodes-ssp@vishay.com small signal switching diodes, high voltage features ? silicon epitaxial planar diodes ? lead (pb)-free component ? component in accordance to rohs 2002/ 95/ec and weee 2002/96/ec applications ? general purposes mechanical data case: quadro melf glass case (sod80) weight: approx. 34 mg cathode band color: black packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation ordering code type marking remarks bav200 v rrm = 60 v bav200-gs18 or bav200-gs08 - tape and reel bav201 v rrm = 120 v bav201-gs18 or BAV201-GS08 - tape and reel bav202 v rrm = 200 v bav202-gs18 or bav202-gs08 - tape and reel bav203 v rrm = 250 v bav203-gs18 or bav203-gs08 - tape and reel parameter test condition part symbol value unit peak reverse voltage bav200 v rrm 60 v bav201 v rrm 120 v bav202 v rrm 200 v bav203 v rrm 250 v reverse voltage bav200 v r 50 v bav201 v r 100 v bav202 v r 150 v bav203 v r 200 v forward continuous current i f 250 ma peak forward surge current t p = 1 s, t j = 25 c i fsm 1a forward peak current f = 50 hz i fm 625 ma power dissipation p tot 500 mw e2
www.vishay.com 2 document number 85544 rev. 1.7, 25-apr-08 bav200/bav201/bav202/bav203 vishay semiconductors for technical support, please contact: diodes-ssp@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit thermal resistance junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter test condition part symbol min. ty p. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 50 v bav200 i r 100 na v r = 100 v bav201 i r 100 na v r = 150 v bav202 i r 100 na v r = 200 v bav203 i r 100 na t j = 100 c, v r = 50 v bav200 i r 15 a t j = 100 c, v r = 100 v bav201 i r 15 a t j = 100 c, v r = 150 v bav202 i r 15 a t j = 100 c, v r = 200 v bav203 i r 15 a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms bav200 v (br) 60 v bav201 v (br) 120 v bav202 v (br) 200 v bav203 v (br) 250 v diode capacitance v r = 0, f = 1 mhz c d 1.5 pf differential forward resistance i f = 10 ma r f 5 reverse recovery time i f = i r = 30 ma, i r = 3 ma, r l = 100 t rr 50 ns figure 1. reverse current vs. junction temperature 040 8 0 120 160 0.01 0.1 1 10 1000 i-re v erse c u rrent (a) r t j -j u nction temperat u re (c) 200 94 90 8 4 100 scattering limit v r = v rrm figure 2. forward current vs. forward voltage 0 0.4 0. 8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 90 8 5 scattering limit t j = 25 c
bav200/bav201/bav202/bav203 document number 85544 rev. 1.7, 25-apr-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: diodes-ssp@vishay.com package dimensions in millimeters (inches): quadro melf sod80 figure 3. differential forward resistance vs. forward current 0.1 1 10 1 10 100 1000 r - differential for w ard resistance ( ) f i f - for w ard c u rrent (ma) 100 94 90 8 9 t j = 25 c 96 12071
www.vishay.com 4 document number 85544 rev. 1.7, 25-apr-08 bav200/bav201/bav202/bav203 vishay semiconductors for technical support, please contact: diodes-ssp@vishay.com ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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